Fabricante:
Package / Case:
Supplier Device Package:
Current - Average Rectified (Io):
Voltage - Forward (Vf) (Max) @ If:
Current - Reverse Leakage @ Vr:
Voltage - DC Reverse (Vr) (Max):
Reverse Recovery Time (trr):
Operating Temperature - Junction:
Capacitance @ Vr, F:
109,386 Registros
Imagen Parte Fabricante Descripción MOQ Valores Acción
1SS352,H3F Toshiba Semiconductor and Storage
DIODE GEN PURP 80V 100MA SC76-2
1
RFQ
1,024,652
lang_0935
Obtener cotización
BAT54LT1G Fairchild/ON Semiconductor
DIODE SCHOTTKY 30V 200MA SOT23-3
1
RFQ
365,251
lang_0935
Obtener cotización
1N4007-TP Micro Commercial Co
DIODE GEN PURP 1KV 1A DO41
1
RFQ
1,690,918
lang_0935
Obtener cotización
NSR0530HT1G Fairchild/ON Semiconductor
DIODE SCHOTTKY 30V 500MA SOD323
1
RFQ
223,909
lang_0935
Obtener cotización
1N4004-TP Micro Commercial Co
DIODE GEN PURP 400V 1A DO41
1
RFQ
165,274
lang_0935
Obtener cotización
1N4148WT Fairchild/ON Semiconductor
DIODE GEN PURP 75V 200MA SOD523F
1
RFQ
957,476
lang_0935
Obtener cotización
BAT54,235 Nexperia USA Inc.
DIODE SCHOTTKY 30V 200MA TO236AB
1
RFQ
7,870
lang_0935
Obtener cotización
BAT54,215 Nexperia USA Inc.
DIODE SCHOTTKY 30V 200MA TO236AB
1
RFQ
1,091,483
lang_0935
Obtener cotización
1N914BWT Fairchild/ON Semiconductor
DIODE GEN PURP 75V 200MA SOD523F
1
RFQ
475,684
lang_0935
Obtener cotización
BAS16LD,315 Nexperia USA Inc.
DIODE GP 100V 215MA DFN1006D-2
1
RFQ
482,113
lang_0935
Obtener cotización
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