Supplier Device Package:
Current - Reverse Leakage @ Vr:
Reverse Recovery Time (trr):
Operating Temperature - Junction:
Capacitance @ Vr, F:
Imagen Parte Fabricante Descripción MOQ Valores Acción
ES15DLWH Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1.5A SOD123W
1
RFQ
8,500
lang_0935
Obtener cotización
ES15DLW Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1.5A SOD123W
1
RFQ
8,500
lang_0935
Obtener cotización
STTH152 STMicroelectronics
DIODE GEN PURP 200V 1.5A DO15
1
RFQ
8,500
lang_0935
Obtener cotización
STTH152RL STMicroelectronics
DIODE GEN PURP 200V 1.5A DO15
1
RFQ
8,500
lang_0935
Obtener cotización
ES15DLW RVG Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1.5A SOD123W
1
RFQ
8,500
lang_0935
Obtener cotización
ES15DLWH Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1.5A SOD123W
1
RFQ
8,500
lang_0935
Obtener cotización
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