Fabricante:
  • (2)
  • (2)
  • (4)
Product Status:
Supplier Device Package:
Current - Reverse Leakage @ Vr:
Current - Average Rectified (Io) (per Diode):
Reverse Recovery Time (trr):
Operating Temperature - Junction:
Imagen Parte Fabricante Descripción MOQ Valores Acción
G3S06512B Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 12A 3-PI
1
RFQ
8,500
lang_0935
Obtener cotización
TRS12N65D,S1F Toshiba Semiconductor and Storage
DIODE ARRAY SCHOTTKY 650V TO247
1
RFQ
8,500
lang_0935
Obtener cotización
TRS12N65FB,S1F(S Toshiba Semiconductor and Storage
DODE SCHOTTKY 650V TO247
1
RFQ
8,500
lang_0935
Obtener cotización
G3S06512B Global Power Technology Co. Ltd
SIC SCHOTTKY DIODE 650V 12A 3-PI
1
RFQ
8,500
lang_0935
Obtener cotización
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